RFP50N06【PDF 1/8 页】MOSFET N-CH 60V 50A TO-220AB

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RFP50N06

Data Sheet

N-Channel Power MOSFET

60V, 50A, 22 m ?

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49018.

September 20 13

Features

? 50A, 60V

? r DS(ON) = 0.022 ?

? Temperature Compensating PSPICE ? Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175 o C Operating Temperature

Symbol

Ordering Information

PART NUMBER

RFP50N06

PACKAGE

TO- 220AB

BRAND

RFP50N06

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

?2002 Fairchild Semiconductor Corporation

DRAIN

(FLANGE)

GATE

RFP50N06 Rev. C0

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